september 2000 ? 2000 fairchild semiconductor corporation FDW2503N rev d (w) FDW2503N dual n-channel 2.5v specified powertrench ? ? ? ? mosfet general description this n-channel 2.5v specified mosfet is a rugged gate version of fairchild's semiconductor?s advanced powertrench process. it has been optimized for power management applications with a wide range of gate drive voltage (2.5v ? 12v). applications ? load switch ? motor drive ? dc/dc conversion ? power management features ? 5.5 a, 20 v. r ds(on) = 0.021 ? @ v gs = 4.5 v r ds(on) = 0.035 ? @ v gs = 2.5 v ? extended v gss range ( 12v) for battery applications ? low gate charge ? high performance trench technology for extremely low r ds(on) ? low profile tssop-8 package d 1 s 1 s 1 g 1 d 2 s 2 s 2 g 2 tssop-8 pin 1 8 7 6 5 1 2 3 4 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 20 v v gss gate-source voltage 12 v i d drain current ? continuous (note 1a) 5.5 a ? pulsed 30 p d power dissipation (note 1a) 1.0 w (note 1b) 0.6 t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 125 c/w (note 1b) 208 package marking and ordering information device marking device reel size tape width quantity 2503n FDW2503N 13?? 12mm 3000 units FDW2503N
FDW2503N rev. d (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 a 20 v ? bv dss === ? t j breakdown voltage temperature coefficient i d = 250 a,referenced to 25 c 14 mv/ c i dss zero gate voltage drain current v ds = 16 v, v gs = 0 v 1 a i gssf gate?body leakage, forward v gs = 12 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?12 v v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 0.6 0.8 1.5 v ? v gs(th) === ? t j gate threshold voltage temperature coefficient i d = 250 a,referenced to 25 c ?3.2 mv/ c r ds(on) static drain?source on?resistance v gs = 4.5 v, i d = 5.5 a v gs = 2.5 v, i d = 4.2 a v gs = 4.5 v, i d = 5.5a, t j =125 c 17 24 23 21 35 34 m ? i d(on) on?state drain current v gs = 4.5 v, v ds = 5 v 30 a g fs forward transconductance v ds = 5 v, i d = 5.5 a 26 s dynamic characteristics c iss input capacitance 1082 pf c oss output capacitance 277 pf c rss reverse transfer capacitance v ds = 10 v, v gs = 0 v, f = 1.0 mhz 130 pf switching characteristics (note 2) t d(on) turn?on delay time 8 20 ns t r turn?on rise time 8 27 ns t d(off) turn?off delay time 24 38 ns t f turn?off fall time v dd = 10 v, i d = 1 a, v gs = 4.5 v, r gen = 6 ? 816ns q g total gate charge 12 17 nc q gs gate?source charge 2 nc q gd gate?drain charge v ds = 10 v, i d = 5.5 a, v gs = 4.5 v 3nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 0.83 a v sd drain?source diode forward voltage v gs = 0 v, i s = 0.83 a (note 2) 0.7 1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) r ja is 125 c/w (steady state) when mounted on a 1 inch2 copper pad on fr-4. b) r ja is 208 c/w (steady state) when mounted on a minimum copper pad on fr-4. 2. pulse test: pulse width < 300 s, duty cycle < 2.0% FDW2503N
FDW2503N rev. d (w) typical characteristics 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 v ds , drain-source voltage (v) i d , drain current (a ) 3.0v 3.5v 2.5v 2.0v v gs = 4.5v 0.5 1 1.5 2 2.5 0 5 10 15 20 25 30 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 2.0v 3.5v 3.0v 4.0v 4.5v 2.5v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistanc e i d = 5.5a v gs = 4.5v 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 12345 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 2.8 a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 5 10 15 20 25 30 0.511.522.53 v gs , gate to source voltage (v) i d , drain current (a ) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a ) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDW2503N
FDW2503N rev. d (w) typical characteristics 0 1 2 3 4 5 02468101214 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 5.5a v ds = 5v 15v 10v 0 300 600 900 1200 1500 1800 0 4 8 12 16 20 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a ) dc 10s 1s 100ms r ds(on) limit v gs = 4.5v single pulse r ja = 208 o c/w t a = 25 o c 10ms 1ms 10 20 30 40 50 p(pk), peak transient power (w) single pulse r ja = 208c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) + r ja r ja = 208 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1b. transient thermal response will change depending on the circuit board design. FDW2503N
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